4
RF Device Data
Freescale Semiconductor
MRF1535NT1 MRF1535FNT1
TYPICAL CHARACTERISTICS, 135 - 175 MHz
Pout, OUTPUT POWER (WATTS)
Figure 4. Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
Figure 5. Drain Efficiency versus Output Power
GAIN (dB)
Figure 6. Output Power versus Biasing Current
IDQ, BIASING CURRENT (mA)
Figure 7. Drain Efficiency versus Biasing Current
IDQ, BIASING CURRENT (mA)
Figure 8. Output Power versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
P
out
, OUTPUT POWER (WATTS)
P
out
, OUTPUT POWER (WATTS)
, DRAIN EFFICIENCY (%)
, DRAIN EFFICIENCY (%)
, DRAIN EFFICIENCY (%)
15
40
80
10
70
60
50
14
13
12
11
15
10
70
10
60
50
40
30
20
14
13
12
11
1200
40
80
200
70
60
50
1000
800
600
400
1200
30
50
200
45
40
35
1000
800
600
400
80
30
80
10
70
60
50
40
70
60
50
40
30
20
60
11
19
10
18
17
16
15
14
13
12
50
40
30
20
175 MHz
155 MHz
135 MHz
VDD
= 12.5 Vdc
175 MHz
155 MHz
135 MHz
VDD
= 12.5 Vdc
175 MHz
155 MHz
135 MHz
VDD
= 12.5 Vdc
Pin
= 30 dBm
175 MHz
155 MHz
135 MHz
VDD
= 12.5 Vdc
Pin
= 30 dBm
175 MHz
155 MHz
135 MHz
IDQ
= 250 mA
Pin
= 30 dBm
175 MHz
155 MHz
135 MHz
IDQ
= 250 mA
Pin
= 30 dBm
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